主讲人：Joachim Holtz 教授
邀请人：马志勋副研究员
时间：2025年6月10日（周二）上午9:30-11:30
地点：艺嘉楼210
主讲人简介：
Joachim Holtz graduated in 1967 and received the Ph.D. degree in 1969 from the Technical University Braunschweig, Germany.
In 1969 he became Associate Professor and in 1971 Full Professor and Head of the Control Engineering Laboratory, Indian Institute of Technology in Madras, India. He joined the Siemens Research Laboratories in Erlangen, Germany in 1972. From 1976 to 1998, he was Professor and Head of the Electrical Machines and Drives Laboratory, Wuppertal University, Germany. He is presently Professor Emeritus and a Consultant.
His publications include 2 invited papers in the PROCEEDINGS OF THE IEEE, 17 invited papers in IEEE Journals, and 27 single-authored IEEE Journal papers. He is the recipient of 17 Prize Paper Awards, a coauthor of seven books. He holds 34 patents.
Dr. Holtz is the recipient of the IEEE Industrial Electronics Society Dr. Eugene Mittelmann Achievement Award, the IEEE Industrial Applications Society Outstanding Achievement Award, the IEEE Power Electronics Society William E. Newell Field Award, the IEEE Third Millennium Medal, the Anthony J. Hornfeck Service Award, and the IEEE Lamme Gold Medal.
Dr. Holtz is Life Fellow of the IEEE, Life AdCom Member, Industrial Electronics Society, Past Editor-in-Chief, IEEE Transactions on Industrial Electronics, Past Chair, IEEE Newell Medal Committee, Past Chair, IEEE IES Fellow Committee, Outstanding Mentor, and Distinguished Lecturer of the IEEE Industrial Electronics Society.
主讲内容简介：
A novel 200-kW inverter topology is built from a combination of 1.2-kV silicon IGBTs and silicon-carbide SiC-MOSFETs. It consists of twelve controllable semiconductor devices per phase, contained in two identical modules that form an active neutral point clamped (ANPC) three-level inverter. The SiC-MOSFETs operate at 48 kHz switching frequency. Each pair of modules per phase generates an output signal of 96 kHz switching frequency using an interleaved modulation technique. Extreme low harmonic content of the output voltage is thus obtained. The IGBTs operate uniquely in a soft commutation mode which leads to unprecedented high efficiency. The complexity of this arrangement requires exactly coordinating the respective commutations between IGBTs and SiC-MOSFETs. Signal processors are too slow to control this system. Concatenated state machines are therefore used for this purpose. They are programmed in FPGA- hardware and clocked by a 100 MHz pulse train.
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